SIHFSL11N50A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFSL11N50A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 190 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 51 nC
trⓘ - Время нарастания: 34 ns
Cossⓘ - Выходная емкость: 208 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: TO-262
Аналог (замена) для SIHFSL11N50A
SIHFSL11N50A Datasheet (PDF)
irfsl11n50a sihfsl11n50a.pdf
IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK
irfsl11n50apbf sihfsl11n50a.pdf
IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK
irfsl9n60a sihfsl9n60a.pdf
IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized
irfsl9n60apbf sihfsl9n60a.pdf
IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized
irfs9n60a sihfs9n60a.pdf
IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr
sihfs9n60a.pdf
IRFS9N60A, SiHFS9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 49 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 13RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanch
irfs11n50apbf sihfs11n50a.pdf
IRFS11N50A, SiHFS11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.52 Low Gate Charge Qg results in Simple DriveQg (Max.) (nC) 52RequirementQgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F