2SJ325 Datasheet and Replacement
Type Designator: 2SJ325
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO252
2SJ325 substitution
2SJ325 Datasheet (PDF)
2sj320.pdf

Ordering number:EN4615AP-Channel Silicon MOSFET2SJ320Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ320] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO
2sj324-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , 2SJ303 , 2SJ324 , P60NF06 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 .
Keywords - 2SJ325 MOSFET datasheet
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