SIHFZ20 Specs and Replacement

Type Designator: SIHFZ20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220AB

SIHFZ20 substitution

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SIHFZ20 datasheet

 ..1. Size:1837K  vishay
 irfz20pbf sihfz20.pdf pdf_icon

SIHFZ20

IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Extremely Low RDS(on) VDS (V) 50 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.10 Fast Switching Qg (Max.) (nC) 17 Low Drive Current Qgs (nC) 9.0 Ease of Paralleling Qgd (nC) 3.0 Excellent Temperature Stability Configuration Single Parts Per Million Quality Compliant to R... See More ⇒

 8.1. Size:1229K  vishay
 irfz24pbf sihfz24.pdf pdf_icon

SIHFZ20

IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.10 Fast Switching Qg (Max.) (nC) 25 Ease of Paralleling Qgs (nC) 5.8 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio... See More ⇒

 8.2. Size:448K  vishay
 irfz24l irfz24s irfz24spbf sihfz24s.pdf pdf_icon

SIHFZ20

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S) Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating Temperature Qgs (nC) 5.8 Fast Sw... See More ⇒

 8.3. Size:348K  vishay
 irfz24 sihfz24.pdf pdf_icon

SIHFZ20

IRFZ24, SiHFZ24 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 60 175 C operating temperature RDS(on) ( )VGS = 10 V 0.10 Fast switching Qg max. (nC) 25 Ease of paralleling Qgs (nC) 5.8 Qgd (nC) 11 Simple drive requirements Configuration Single Material categorization for definitions of compliance ... See More ⇒

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Detailed specifications: SIHFU9214, SIHFU9220, SIHFU9310, SIHFUC20, SIHFZ10, SIHFZ14, SIHFZ14L, SIHFZ14S, IRF9540N, SIHFZ24, SIHFZ24S, SIHFZ34, SIHFZ34L, SIHFZ34S, SIHFZ40, SIHFZ44, SIHFZ44L

Keywords - SIHFZ20 MOSFET specs

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