All MOSFET. SIHFZ24S Datasheet

 

SIHFZ24S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHFZ24S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-263

 SIHFZ24S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFZ24S Datasheet (PDF)

 ..1. Size:448K  vishay
 irfz24l irfz24s irfz24spbf sihfz24s.pdf

SIHFZ24S SIHFZ24S

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S)Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating TemperatureQgs (nC) 5.8 Fast Sw

 7.1. Size:1229K  vishay
 irfz24pbf sihfz24.pdf

SIHFZ24S SIHFZ24S

IRFZ24, SiHFZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 25 Ease of ParallelingQgs (nC) 5.8Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

 7.2. Size:348K  vishay
 irfz24 sihfz24.pdf

SIHFZ24S SIHFZ24S

IRFZ24, SiHFZ24www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 175 C operating temperatureRDS(on) ()VGS = 10 V 0.10 Fast switchingQg max. (nC) 25 Ease of parallelingQgs (nC) 5.8Qgd (nC) 11 Simple drive requirementsConfiguration Single Material categorization: for definitions of compliance

 8.1. Size:1837K  vishay
 irfz20pbf sihfz20.pdf

SIHFZ24S SIHFZ24S

IRFZ20, SiHFZ20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Extremely Low RDS(on)VDS (V) 50 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 17 Low Drive CurrentQgs (nC) 9.0 Ease of ParallelingQgd (nC) 3.0 Excellent Temperature StabilityConfiguration Single Parts Per Million Quality Compliant to R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top