SIHG20N50E Specs and Replacement

Type Designator: SIHG20N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.184 Ohm

Package: TO-247AC

SIHG20N50E substitution

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SIHG20N50E datasheet

 ..1. Size:175K  vishay
 sihg20n50e.pdf pdf_icon

SIHG20N50E

SiHG20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.184 Reduced switching and conduction losses Qg max. (nC) 92 Low gate charge (Qg) Qgs (nC) 10 Avalanche energy rated (UIS) Qgd (nC) 19 Mater... See More ⇒

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 sihg20n50c.pdf pdf_icon

SIHG20N50E

SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 560 Definition RDS(on) ( )VGS = 10 V 0.270 Low Figure-of-Merit Ron x Qg Qg (Max.) (nC) 76 100 % Avalanche Tested Qgs (nC) 21 High Peak Current Capability Qgd (nC) 34 dV/dt Ruggedness Configuration Single Improved Trr/Qrr Imp... See More ⇒

 5.2. Size:376K  inchange semiconductor
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SIHG20N50E

isc N-Channel MOSFET Transistor SIHG20N50C FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.27 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 9.1. Size:182K  vishay
 sihg22n60e.pdf pdf_icon

SIHG20N50E

SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Available Avalanche energy rated (UIS) Qgd (... See More ⇒

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Detailed specifications: SIHFZ48R, SIHFZ48RL, SIHFZ48RS, SIHFZ48S, SIHG14N50D, SIHG16N50C, SIHG17N60D, SIHG20N50C, STP80NF70, SIHG22N50D, SIHG22N60E, SIHG22N60S, SIHG22N65E, SIHG23N60E, SIHG24N65E, SIHG25N40D, SIHG25N50E

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