SIHG20N50E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHG20N50E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 179 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 19 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 46 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 87 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.184 Ohm
Тип корпуса: TO-247AC
Аналог (замена) для SIHG20N50E
SIHG20N50E Datasheet (PDF)
sihg20n50e.pdf
SiHG20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater
sihg20n50c.pdf
SiHG20N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 560DefinitionRDS(on) ()VGS = 10 V 0.270 Low Figure-of-Merit Ron x QgQg (Max.) (nC) 76 100 % Avalanche TestedQgs (nC) 21 High Peak Current CapabilityQgd (nC) 34 dV/dt RuggednessConfiguration Single Improved Trr/Qrr Imp
sihg20n50c.pdf
isc N-Channel MOSFET Transistor SIHG20N50CFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
sihg22n60e.pdf
SiHG22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11Available Avalanche energy rated (UIS)Qgd (
sihg22n65e.pdf
SiHG22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab
sihg22n50d.pdf
SiHG22N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.230- Low Input Capacitance (Ciss)Qg max. (nC) 98- Reduced Capacitive Switching LossesQgs (nC) 13- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS)
sihg24n65e.pdf
SiHG24N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced Switching and Conduction LossesQg max. (nC) 122 Ultra Low Gate Charge (Qg)Qgs (nC) 21 Avalanche Energy Rated (UIS)Qgd (nC) 37
sihg22n60s.pdf
SiHG22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation oneVDS at TJ max. (V) 650 High EAR capabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower figure-of-merit Ron x QgQg max. (nC) 98 100 % avalanche testedQgs (nC) 17AvailableQgd (nC) 25 Ultra low RonConfiguration Single dV/dt ruggedness U
sihg25n40d.pdf
SiHG25N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 450DefinitionRDS(on) max. at 25 C () VGS = 10 V 0.17 Optimal DesignQg max. (nC) 88- Low Area Specific On-ResistanceQgs (nC) 12- Low Input Capacitance (Ciss)Qgd (nC) 23- Reduced Capacitive Switching LossesConf
sihg23n60e.pdf
SiHG23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16 Avalanche energy rated (UIS)Qgd (nC) 25
sihg28n65e.pdf
SiHG28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37
sihg25n50e.pdf
SiHG25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config
sihg28n60ef.pdf
SiHG28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc
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