All MOSFET. SIHG73N60E Datasheet

 

SIHG73N60E Datasheet and Replacement


   Type Designator: SIHG73N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 241 nC
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-247AC
 

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SIHG73N60E Datasheet (PDF)

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SIHG73N60E

SiHG73N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.039 Reduced switching and conduction lossesQg max. (nC) 362 Ultra low gate charge (Qg)Qgs (nC) 48Available Avalanche energy rated (UIS)Qgd

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 sihg70n60ef.pdf pdf_icon

SIHG73N60E

SiHG70N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) typ. at 25 C () VGS = 10 V 0.033 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 380 Low input capacitance (Ciss)Qgs (nC) 62 Increase

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