SIHG73N60E Specs and Replacement
Type Designator: SIHG73N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-247AC
SIHG73N60E substitution
- MOSFET ⓘ Cross-Reference Search
SIHG73N60E datasheet
sihg73n60e.pdf
SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.039 Reduced switching and conduction losses Qg max. (nC) 362 Ultra low gate charge (Qg) Qgs (nC) 48 Available Avalanche energy rated (UIS) Qgd ... See More ⇒
sihg70n60ef.pdf
SiHG70N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) typ. at 25 C ( ) VGS = 10 V 0.033 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 380 Low input capacitance (Ciss) Qgs (nC) 62 Increase... See More ⇒
Detailed specifications: SIHG33N60E, SIHG33N60EF, SIHG460B, SIHG47N60E, SIHG47N60EF, SIHG47N60S, SIHG47N65E, SIHG64N65E, 8N60, SIHH11N60E, SIHH14N60E, SIHH21N60E, SIHH26N60E, SIHL510, SIHL510S, SIHL520, SIHL520L
Keywords - SIHG73N60E MOSFET specs
SIHG73N60E cross reference
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SIHG73N60E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
