SIHH14N60E Specs and Replacement
Type Designator: SIHH14N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 74 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.255 Ohm
Package: POWERPAK8X8
SIHH14N60E substitution
- MOSFET ⓘ Cross-Reference Search
SIHH14N60E datasheet
sihh14n60e.pdf
SiHH14N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Fully lead (Pb)-free device VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. ( ) at 25 C VGS = 10 V 0.220 Low input capacitance (Ciss) Qg max. (nC) 82 Reduced switching and conduction losses Qgs (nC) 8 Qgd (nC) 16 Ultra low gate charge (Qg) Confi... See More ⇒
sihh180n60e.pdf
SiHH180N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Pin 4 drain 4th generation E series technology PowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x Qg Pin 1 Low effective capacitance (Co(er)) gate 4 Reduced switching and conduction losses 1 Avalanche energy rated (UIS) Pin 2 2 Kelvin connection Kelvin connection for reduced gate ... See More ⇒
sihh11n60e.pdf
SiHH11N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Fully lead (Pb)-free device VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. ( ) at 25 C VGS = 10 V 0.295 Low input capacitance (Ciss) Qg max. (nC) 62 Reduced switching and conduction losses Qgs (nC) 7 Qgd (nC) 13 Ultra low gate charge (Qg) Confi... See More ⇒
Detailed specifications: SIHG460B, SIHG47N60E, SIHG47N60EF, SIHG47N60S, SIHG47N65E, SIHG64N65E, SIHG73N60E, SIHH11N60E, 75N75, SIHH21N60E, SIHH26N60E, SIHL510, SIHL510S, SIHL520, SIHL520L, SIHL530, SIHL530S
Keywords - SIHH14N60E MOSFET specs
SIHH14N60E cross reference
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