SIHH26N60E Datasheet and Replacement
Type Designator: SIHH26N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 202 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: POWERPAK8X8
SIHH26N60E substitution
SIHH26N60E Datasheet (PDF)
sihh26n60e.pdf

SiHH26N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.117 Low input capacitance (Ciss)Qg max. (nC) 116 Reduced switching and conduction lossesQgs (nC) 18Qgd (nC) 33 Ultra low gate charge (Qg)Con
sihh27n60ef.pdf

SiHH27N60EFwww.vishay.comVishay SiliconixE Series Power MOSFET With Fast Body DiodeFEATURESPin 4 Completely lead (Pb)-free devicePowerPAK 8 x 8 Low figure-of-merit (FOM) Ron x QgPin 1 Low input capacitance (Ciss)4 Reduced switching and conduction lossesPin 21 Ultra low gate charge (Qg)2 Avalanche energy rated (UIS)33 Pin 3 Kelvin co
sihh21n60e.pdf

SiHH21N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.153 Low input capacitance (Ciss)Qg max. (nC) 83 Reduced switching and conduction lossesQgs (nC) 11Qgd (nC) 20 Ultra low gate charge (Qg)Conf
Datasheet: SIHG47N60EF , SIHG47N60S , SIHG47N65E , SIHG64N65E , SIHG73N60E , SIHH11N60E , SIHH14N60E , SIHH21N60E , IRF730 , SIHL510 , SIHL510S , SIHL520 , SIHL520L , SIHL530 , SIHL530S , SIHL540 , SIHL540S .
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