SIHL640S Datasheet and Replacement
Type Designator: SIHL640S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 83
nS
Cossⓘ -
Output Capacitance: 400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package: SMD-220
- MOSFET Cross-Reference Search
SIHL640S Datasheet (PDF)
..1. Size:915K vishay
irl640s sihl640s.pdf 
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
..2. Size:917K vishay
sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
7.1. Size:1708K vishay
irl640pbf sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
7.2. Size:1705K vishay
irl640 sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
9.1. Size:2277K vishay
irl630 sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
9.2. Size:218K vishay
irl630s sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
9.3. Size:244K vishay
irl630spbf sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
9.4. Size:2134K vishay
irl620s sihl620s.pdf
IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl
9.5. Size:2119K vishay
irl620 sihl620.pdf
IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
9.6. Size:1464K vishay
irl620spbf sihl620s.pdf
IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
9.7. Size:2205K vishay
irl630pbf sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
9.8. Size:2122K vishay
irl620pbf sihl620.pdf
IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
9.9. Size:1439K vishay
irl620s sihl620s 2.pdf
IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
Datasheet: SIHL530S
, SIHL540
, SIHL540S
, SIHL620
, SIHL620S
, SIHL630
, SIHL630S
, SIHL640
, AO4468
, SIHLD014
, SIHLD024
, SIHLD110
, SIHLD120
, SIHLI520G
, SIHLI530G
, SIHLI540G
, SIHLI620G
.
History: STP40N65M2
| 2SK4204LS
| SSFD3004
| NTP30N06
| DH8004
| MCH3479
| WMK099N10LG2
Keywords - SIHL640S MOSFET datasheet
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