SIHLI620G Specs and Replacement

Type Designator: SIHLI620G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220FP

SIHLI620G substitution

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SIHLI620G datasheet

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Detailed specifications: SIHL640S, SIHLD014, SIHLD024, SIHLD110, SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, IRF3205, SIHLI630G, SIHLI640G, SIHLIZ14G, SIHLIZ24G, SIHLIZ34G, SIHLIZ44G, SIHLL014, SIHLL110

Keywords - SIHLI620G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs