SIHLI630G Specs and Replacement

Type Designator: SIHLI630G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220FP

SIHLI630G substitution

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SIHLI630G datasheet

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SIHLI630G

IRLI630G, SiHLI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.40 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 40 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V and 5V ... See More ⇒

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SIHLI630G

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Detailed specifications: SIHLD014, SIHLD024, SIHLD110, SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, IRF740, SIHLI640G, SIHLIZ14G, SIHLIZ24G, SIHLIZ34G, SIHLIZ44G, SIHLL014, SIHLL110, SIHLR014

Keywords - SIHLI630G MOSFET specs

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