All MOSFET. SIHLI630G Datasheet

 

SIHLI630G Datasheet and Replacement


   Type Designator: SIHLI630G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220FP
 

 SIHLI630G substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIHLI630G Datasheet (PDF)

 ..1. Size:1683K  vishay
 sihli630g.pdf pdf_icon

SIHLI630G

IRLI630G, SiHLI630GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.40f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 40 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V and 5V

 8.1. Size:1895K  vishay
 irli620g sihli620g.pdf pdf_icon

SIHLI630G

IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V

 8.2. Size:1706K  vishay
 irli640g sihli640g.pdf pdf_icon

SIHLI630G

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 8.3. Size:1708K  vishay
 irli640gpbf sihli640g.pdf pdf_icon

SIHLI630G

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

SHOW MORE

Datasheet: SIHLD014 , SIHLD024 , SIHLD110 , SIHLD120 , SIHLI520G , SIHLI530G , SIHLI540G , SIHLI620G , IRF740 , SIHLI640G , SIHLIZ14G , SIHLIZ24G , SIHLIZ34G , SIHLIZ44G , SIHLL014 , SIHLL110 , SIHLR014 .

History: APT1201R5BVR | SPB100N08S2-07 | IXFT32N50 | IPP080N03L | SM3322NHQA | SSM3J129TU | FQB11P06

Keywords - SIHLI630G MOSFET datasheet

 SIHLI630G cross reference
 SIHLI630G equivalent finder
 SIHLI630G lookup
 SIHLI630G substitution
 SIHLI630G replacement

 

 
Back to Top

 


 
.