All MOSFET. SIHLIZ34G Datasheet

 

SIHLIZ34G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHLIZ34G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220FP

 SIHLIZ34G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHLIZ34G Datasheet (PDF)

 ..1. Size:1637K  vishay
 irliz34g sihliz34g.pdf

SIHLIZ34G SIHLIZ34G

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 ..2. Size:1638K  vishay
 irliz34gpbf sihliz34g.pdf

SIHLIZ34G SIHLIZ34G

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 8.1. Size:1637K  vishay
 irliz14g sihliz14g.pdf

SIHLIZ34G SIHLIZ34G

IRLIZ14G, SiHLIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.20f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate DriveQgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 6.

 8.2. Size:1697K  vishay
 sihliz24g.pdf

SIHLIZ34G SIHLIZ34G

IRLIZ24G, SiHLIZ24GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 5.0 V 0.10f = 60 Hz)COMPLIANT Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 4.5 Logic-Level Gate DriveQgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Fast

 8.3. Size:1638K  vishay
 irliz14gpbf sihliz14g.pdf

SIHLIZ34G SIHLIZ34G

IRLIZ14G, SiHLIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.20f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate DriveQgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 6.

 8.4. Size:1741K  vishay
 sihliz44g.pdf

SIHLIZ34G SIHLIZ34G

IRLIZ44G, SiHLIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 5 V 0.028f = 60 Hz)COMPLIANT Qg (Max.) (nC) 66 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 12 Logic-Level Gate DriveQgd (nC) 43 RDS(on) Specified at VGS = 4 V and 5 VConfigurat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTD5P06V

 

 
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