SIHLIZ34G Datasheet. Specs and Replacement

Type Designator: SIHLIZ34G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-220FP

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SIHLIZ34G datasheet

 ..1. Size:1637K  vishay
 irliz34g sihliz34g.pdf pdf_icon

SIHLIZ34G

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V ... See More ⇒

 ..2. Size:1638K  vishay
 irliz34gpbf sihliz34g.pdf pdf_icon

SIHLIZ34G

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V ... See More ⇒

 8.1. Size:1637K  vishay
 irliz14g sihliz14g.pdf pdf_icon

SIHLIZ34G

IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.... See More ⇒

 8.2. Size:1697K  vishay
 sihliz24g.pdf pdf_icon

SIHLIZ34G

IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 5.0 V 0.10 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 4.5 Logic-Level Gate Drive Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Fast ... See More ⇒

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Detailed specifications: SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G, SIHLI640G, SIHLIZ14G, SIHLIZ24G, IRF540, SIHLIZ44G, SIHLL014, SIHLL110, SIHLR014, SIHLR024, SIHLR110, SIHLU014, SIHLU024

Keywords - SIHLIZ34G MOSFET specs

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