SIHP25N40D Specs and Replacement
Type Designator: SIHP25N40D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 177 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-220AB
SIHP25N40D substitution
- MOSFET ⓘ Cross-Reference Search
SIHP25N40D datasheet
sihp25n60efl.pdf
SiHP25N60EFL www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES PRODUCT SUMMARY Reduced figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Fast body diode MOSFET using E series RDS(on) typ. ( ) at 25 C VGS = 10 V 0.127 technology Qg (Max.) (nC) 75 Reduced trr, Qrr, and IRRM Qgs (nC) 17 Increased robust... See More ⇒
sihp25n50e.pdf
SiHP25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config... See More ⇒
Detailed specifications: SIHP17N60D , SIHP18N50C , SIHP20N50E , SIHP22N60E , SIHP22N60S , SIHP22N65E , SIHP23N60E , SIHP24N65E , 12N60 , SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , SIHP33N60E , SIHP33N60EF , SIHP5N50D , SIHP6N40D .
Keywords - SIHP25N40D MOSFET specs
SIHP25N40D cross reference
SIHP25N40D equivalent finder
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SIHP25N40D replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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