All MOSFET. SIHP25N40D Datasheet

 

SIHP25N40D Datasheet and Replacement


   Type Designator: SIHP25N40D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-220AB
 

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SIHP25N40D Datasheet (PDF)

 ..1. Size:208K  vishay
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SIHP25N40D

SiHP25N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.17- Low Input Capacitance (Ciss)Qg max. (nC) 88- Reduced Capacitive Switching LossesQgs (nC) 12 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 23

 7.1. Size:138K  vishay
sihp25n60efl.pdf pdf_icon

SIHP25N40D

SiHP25N60EFLwww.vishay.comVishay SiliconixE Series Power MOSFET with Fast Body Diode and Low Gate ChargeFEATURESPRODUCT SUMMARY Reduced figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 650 Fast body diode MOSFET using E series RDS(on) typ. () at 25 C VGS = 10 V 0.127technologyQg (Max.) (nC) 75 Reduced trr, Qrr, and IRRMQgs (nC) 17 Increased robust

 7.2. Size:158K  vishay
sihp25n50e.pdf pdf_icon

SIHP25N40D

SiHP25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 9.1. Size:165K  vishay
sihp28n65e.pdf pdf_icon

SIHP25N40D

SiHP28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37

Datasheet: SIHP17N60D , SIHP18N50C , SIHP20N50E , SIHP22N60E , SIHP22N60S , SIHP22N65E , SIHP23N60E , SIHP24N65E , 4N60 , SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , SIHP33N60E , SIHP33N60EF , SIHP5N50D , SIHP6N40D .

History: PTF2N65 | AOTE32136C | UPA1763G | STU3N80K5 | IRFP431 | TK11P65W

Keywords - SIHP25N40D MOSFET datasheet

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