SIHP25N40D PDF and Equivalents Search

 

SIHP25N40D Specs and Replacement

Type Designator: SIHP25N40D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 177 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO-220AB

SIHP25N40D substitution

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SIHP25N40D datasheet

 ..1. Size:208K  vishay
sihp25n40d.pdf pdf_icon

SIHP25N40D

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 7.1. Size:138K  vishay
sihp25n60efl.pdf pdf_icon

SIHP25N40D

SiHP25N60EFL www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES PRODUCT SUMMARY Reduced figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Fast body diode MOSFET using E series RDS(on) typ. ( ) at 25 C VGS = 10 V 0.127 technology Qg (Max.) (nC) 75 Reduced trr, Qrr, and IRRM Qgs (nC) 17 Increased robust... See More ⇒

 7.2. Size:158K  vishay
sihp25n50e.pdf pdf_icon

SIHP25N40D

SiHP25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config... See More ⇒

 9.1. Size:165K  vishay
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SIHP25N40D

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Detailed specifications: SIHP17N60D , SIHP18N50C , SIHP20N50E , SIHP22N60E , SIHP22N60S , SIHP22N65E , SIHP23N60E , SIHP24N65E , 12N60 , SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , SIHP33N60E , SIHP33N60EF , SIHP5N50D , SIHP6N40D .

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