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SIHP30N60E Specs and Replacement


   Type Designator: SIHP30N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220AB
 

 SIHP30N60E substitution

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SIHP30N60E Specs

 ..1. Size:201K  vishay
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SIHP30N60E

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 9.1. Size:146K  vishay
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SIHP30N60E

SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS... See More ⇒

 9.2. Size:159K  vishay
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SIHP30N60E

SiHP33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.098 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 155 Low input capacitance (Ciss) Qgs (nC) 22 Reduced s... See More ⇒

Detailed specifications: SIHP22N60S , SIHP22N65E , SIHP23N60E , SIHP24N65E , SIHP25N40D , SIHP25N50E , SIHP28N60EF , SIHP28N65E , AON6380 , SIHP33N60E , SIHP33N60EF , SIHP5N50D , SIHP6N40D , SIHP6N65E , SIHP7N60E , SIHP8N50D , SIHS20N50C .

History: KP809E

Keywords - SIHP30N60E MOSFET specs

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