SIHP33N60EF Specs and Replacement
Type Designator: SIHP33N60EF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 154 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO-220AB
SIHP33N60EF substitution
SIHP33N60EF Specs
sihp33n60ef.pdf
SiHP33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.098 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 155 Low input capacitance (Ciss) Qgs (nC) 22 Reduced s... See More ⇒
sihp33n60e.pdf
SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS... See More ⇒
Detailed specifications: SIHP23N60E , SIHP24N65E , SIHP25N40D , SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , SIHP33N60E , CS150N03A8 , SIHP5N50D , SIHP6N40D , SIHP6N65E , SIHP7N60E , SIHP8N50D , SIHS20N50C , SIHS36N50D , SIHU3N50D .
Keywords - SIHP33N60EF MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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