SIHP5N50D Datasheet. Specs and Replacement

Type Designator: SIHP5N50D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220AB

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SIHP5N50D datasheet

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SIHP5N50D

SiHP5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.5 - Low Input Capacitance (Ciss) Qg (max.) (nC) 20 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 5 - Avalanche Energy Rated (UIS) ... See More ⇒

Detailed specifications: SIHP24N65E, SIHP25N40D, SIHP25N50E, SIHP28N60EF, SIHP28N65E, SIHP30N60E, SIHP33N60E, SIHP33N60EF, NCEP15T14, SIHP6N40D, SIHP6N65E, SIHP7N60E, SIHP8N50D, SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA

Keywords - SIHP5N50D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.