All MOSFET. SIHP6N40D Datasheet

 

SIHP6N40D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHP6N40D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220AB

 SIHP6N40D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHP6N40D Datasheet (PDF)

 ..1. Size:214K  vishay
 sihp6n40d.pdf

SIHP6N40D SIHP6N40D

SiHP6N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.0- Low Input Capacitance (Ciss)Qg max. (nC) 18- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 4- Avalanche Energy Rated (UIS)Conf

 8.1. Size:166K  vishay
 sihp6n65e.pdf

SIHP6N40D SIHP6N40D

SiHP6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat

Datasheet: SIHP25N40D , SIHP25N50E , SIHP28N60EF , SIHP28N65E , SIHP30N60E , SIHP33N60E , SIHP33N60EF , SIHP5N50D , K2611 , SIHP6N65E , SIHP7N60E , SIHP8N50D , SIHS20N50C , SIHS36N50D , SIHU3N50D , SIHU3N50DA , SIHU5N50D .

 

 
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