SIHP6N40D Specs and Replacement

Type Designator: SIHP6N40D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220AB

SIHP6N40D substitution

- MOSFET ⓘ Cross-Reference Search

 

SIHP6N40D datasheet

 ..1. Size:214K  vishay
 sihp6n40d.pdf pdf_icon

SIHP6N40D

SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.0 - Low Input Capacitance (Ciss) Qg max. (nC) 18 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 4 - Avalanche Energy Rated (UIS) Conf... See More ⇒

 8.1. Size:166K  vishay
 sihp6n65e.pdf pdf_icon

SIHP6N40D

SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat... See More ⇒

Detailed specifications: SIHP25N40D, SIHP25N50E, SIHP28N60EF, SIHP28N65E, SIHP30N60E, SIHP33N60E, SIHP33N60EF, SIHP5N50D, AON7506, SIHP6N65E, SIHP7N60E, SIHP8N50D, SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D

Keywords - SIHP6N40D MOSFET specs

 SIHP6N40D cross reference

 SIHP6N40D equivalent finder

 SIHP6N40D pdf lookup

 SIHP6N40D substitution

 SIHP6N40D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs