SIHP8N50D MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHP8N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220AB
SIHP8N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHP8N50D Datasheet (PDF)
..1. Size:213K vishay
sihp8n50d.pdf
sihp8n50d.pdf
SiHP8N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.85- Low Input Capacitance (Ciss)Qg (max.) (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7 - Avalanche Energy Rated (UIS)
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