SIHP8N50D Specs and Replacement

Type Designator: SIHP8N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220AB

SIHP8N50D substitution

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SIHP8N50D datasheet

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SIHP8N50D

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Detailed specifications: SIHP28N65E, SIHP30N60E, SIHP33N60E, SIHP33N60EF, SIHP5N50D, SIHP6N40D, SIHP6N65E, SIHP7N60E, TK10A60D, SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E

Keywords - SIHP8N50D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.