All MOSFET. SIHU6N62E Datasheet

 

SIHU6N62E Datasheet and Replacement


   Type Designator: SIHU6N62E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 620 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-251
 

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SIHU6N62E Datasheet (PDF)

 ..1. Size:175K  vishay
 sihu6n62e.pdf pdf_icon

SIHU6N62E

SiHU6N62Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC) 34 Ultra low gate charge (Qg)Qgs (nC) 4 Avalanche energy rated (UIS)Qgd (nC) 8 Mate

 7.1. Size:132K  vishay
 sihu6n65e.pdf pdf_icon

SIHU6N62E

SiHU6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat

Datasheet: SIHP6N65E , SIHP7N60E , SIHP8N50D , SIHS20N50C , SIHS36N50D , SIHU3N50D , SIHU3N50DA , SIHU5N50D , AO3401 , SIHU6N65E , SIHU7N60E , SIHW30N60E , SIHW33N60E , SIHW47N60E , SIHW73N60E , FMA49N20T2 , FMB16N50E .

History: FTU04N65C

Keywords - SIHU6N62E MOSFET datasheet

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