SIHU6N65E Specs and Replacement

Type Designator: SIHU6N65E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-251

SIHU6N65E substitution

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SIHU6N65E datasheet

 ..1. Size:132K  vishay
 sihu6n65e.pdf pdf_icon

SIHU6N65E

SiHU6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat... See More ⇒

 7.1. Size:175K  vishay
 sihu6n62e.pdf pdf_icon

SIHU6N65E

SiHU6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 34 Ultra low gate charge (Qg) Qgs (nC) 4 Avalanche energy rated (UIS) Qgd (nC) 8 Mate... See More ⇒

Detailed specifications: SIHP7N60E, SIHP8N50D, SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, 10N65, SIHU7N60E, SIHW30N60E, SIHW33N60E, SIHW47N60E, SIHW73N60E, FMA49N20T2, FMB16N50E, FMB80N10T2

Keywords - SIHU6N65E MOSFET specs

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