All MOSFET. SIHU7N60E Datasheet

 

SIHU7N60E Datasheet and Replacement


   Type Designator: SIHU7N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-251
 

 SIHU7N60E substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIHU7N60E Datasheet (PDF)

 ..1. Size:169K  vishay
 sihu7n60e.pdf pdf_icon

SIHU7N60E

SiHU7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

Datasheet: SIHP8N50D , SIHS20N50C , SIHS36N50D , SIHU3N50D , SIHU3N50DA , SIHU5N50D , SIHU6N62E , SIHU6N65E , 13N50 , SIHW30N60E , SIHW33N60E , SIHW47N60E , SIHW73N60E , FMA49N20T2 , FMB16N50E , FMB80N10T2 , FMC03N60E .

History: SSM3J14T

Keywords - SIHU7N60E MOSFET datasheet

 SIHU7N60E cross reference
 SIHU7N60E equivalent finder
 SIHU7N60E lookup
 SIHU7N60E substitution
 SIHU7N60E replacement

 

 
Back to Top

 


 
.