SIHW30N60E Specs and Replacement

Type Designator: SIHW30N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-247AD

SIHW30N60E substitution

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SIHW30N60E datasheet

 ..1. Size:130K  vishay
 sihw30n60e.pdf pdf_icon

SIHW30N60E

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 sihw33n60e.pdf pdf_icon

SIHW30N60E

SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS... See More ⇒

Detailed specifications: SIHS20N50C, SIHS36N50D, SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, RFP50N06, SIHW33N60E, SIHW47N60E, SIHW73N60E, FMA49N20T2, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs