SIHW47N60E Specs and Replacement
Type Designator: SIHW47N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: TO-247AD
SIHW47N60E substitution
- MOSFET ⓘ Cross-Reference Search
SIHW47N60E datasheet
Detailed specifications: SIHU3N50D, SIHU3N50DA, SIHU5N50D, SIHU6N62E, SIHU6N65E, SIHU7N60E, SIHW30N60E, SIHW33N60E, AO3407, SIHW73N60E, FMA49N20T2, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES
Keywords - SIHW47N60E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
