All MOSFET. SIHW47N60E Datasheet

 

SIHW47N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHW47N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 147 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO-247AD

 SIHW47N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHW47N60E Datasheet (PDF)

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 sihw47n60e.pdf

SIHW47N60E SIHW47N60E

SiHW47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced Switching and Conduction LossesQg max. (nC) 220 Ultra Low Gate Charge (Qg)Qgs (nC) 36 Avalanche Energy Rated (UIS)Qgd (nC) 60

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