FMB80N10T2 Specs and Replacement

Type Designator: FMB80N10T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm

Package: T-PACK-SJ

FMB80N10T2 substitution

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FMB80N10T2 datasheet

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 fmb80n10t2 fmc80n10t2 fmi80n10t2.pdf pdf_icon

FMB80N10T2

SPECIFICATION Device Name Power MOSFET FMI80N10T2 (T-pack L) FMC80N10T2 (T-pack S) Type Name FMB80N10T2 (T-pack SJ) Spec. No. MS5F6118 Date Jun.-17-2005 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Jun.-17-'05 a CHECKED Jun.-17-'05 b MS5F6118 1 / 22 CHECKED Jun.-17-'05 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji E... See More ⇒

Detailed specifications: SIHU6N65E, SIHU7N60E, SIHW30N60E, SIHW33N60E, SIHW47N60E, SIHW73N60E, FMA49N20T2, FMB16N50E, IRF2807, FMC03N60E, FMC05N50E, FMC05N60E, FMC06N60ES, FMC07N50E, FMC10N60E, FMC11N60E, FMC12N50E

Keywords - FMB80N10T2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.