All MOSFET. FMH17N60ES Datasheet

 

FMH17N60ES Datasheet and Replacement


   Type Designator: FMH17N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.7 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 68 nC
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-3P-Q
 

 FMH17N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMH17N60ES Datasheet (PDF)

 ..1. Size:525K  fuji
 fmh17n60es.pdf pdf_icon

FMH17N60ES

FMH17N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

Datasheet: FMH06N90E , FMH07N90E , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES , FMH16N60ES , IRFZ44N , FMH19N60E , FMH19N60ES , FMH20N50E , FMH20N50ES , FMH21N50ES , FMH23N50ES , FMH23N60E , FMH23N60ES .

Keywords - FMH17N60ES MOSFET datasheet

 FMH17N60ES cross reference
 FMH17N60ES equivalent finder
 FMH17N60ES lookup
 FMH17N60ES substitution
 FMH17N60ES replacement

 

 
Back to Top

 


 
.