FMH17N60ES Specs and Replacement

Type Designator: FMH17N60ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 285 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-3P-Q

FMH17N60ES substitution

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FMH17N60ES datasheet

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FMH17N60ES

FMH17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V... See More ⇒

Detailed specifications: FMH06N90E, FMH07N90E, FMH09N90E, FMH11N90E, FMH13N60ES, FMH16N50E, FMH16N50ES, FMH16N60ES, IRFZ44N, FMH19N60E, FMH19N60ES, FMH20N50E, FMH20N50ES, FMH21N50ES, FMH23N50ES, FMH23N60E, FMH23N60ES

Keywords - FMH17N60ES MOSFET specs

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