FMH19N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: FMH19N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 315 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 105 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.365 Ohm
Package: TO-3P-Q
FMH19N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMH19N60E Datasheet (PDF)
Datasheet: FMH07N90E , FMH09N90E , FMH11N90E , FMH13N60ES , FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , IRF3205 , FMH19N60ES , FMH20N50E , FMH20N50ES , FMH21N50ES , FMH23N50ES , FMH23N60E , FMH23N60ES , FMH28N50E .
