FMH21N50ES Datasheet and Replacement
Type Designator: FMH21N50ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.7 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 68 nC
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-3P-Q
FMH21N50ES substitution
FMH21N50ES Datasheet (PDF)
fmh21n50es.pdf

FMH21N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5
Datasheet: FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , FMH19N60E , FMH19N60ES , FMH20N50E , FMH20N50ES , IRF540N , FMH23N50ES , FMH23N60E , FMH23N60ES , FMH28N50E , FMH28N50ES , FMH30N60S1 , FMH47N60S1 , FMI03N60E .
History: FQB13N06TM
Keywords - FMH21N50ES MOSFET datasheet
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History: FQB13N06TM



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