All MOSFET. FMH21N50ES Datasheet

 

FMH21N50ES Datasheet and Replacement


   Type Designator: FMH21N50ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-3P-Q
 

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FMH21N50ES Datasheet (PDF)

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FMH21N50ES

FMH21N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

Datasheet: FMH16N50E , FMH16N50ES , FMH16N60ES , FMH17N60ES , FMH19N60E , FMH19N60ES , FMH20N50E , FMH20N50ES , IRF540 , FMH23N50ES , FMH23N60E , FMH23N60ES , FMH28N50E , FMH28N50ES , FMH30N60S1 , FMH47N60S1 , FMI03N60E .

History: IXFM10N90

Keywords - FMH21N50ES MOSFET datasheet

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