FMH47N60S1 MOSFET Datasheet: N-Ch, 600V, 47A. Full specification with pinout and replacement list

FMH47N60S1 Specs and Replacement

   Type Designator: FMH47N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 8400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-3P

FMH47N60S1 substitution

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FMH47N60S1 datasheet

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http //www.fujielectric.com/products/semiconductor/ FMH47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 3.2 0.1 TO-3P 15.5max 13 0.2 1.5 0.2 Low switching loss 10 0.2 4.5 0.2 easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications ... See More ⇒

0.1. Size:258K inchange semiconductor
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isc N-Channel MOSFET Transistor FMH47N60S1FD FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai... See More ⇒

Detailed specifications: FMH20N50ES , FMH21N50ES , FMH23N50ES , FMH23N60E , FMH23N60ES , FMH28N50E , FMH28N50ES , FMH30N60S1 , IRLZ44N , FMI03N60E , FMI05N50E , FMI05N60E , FMI06N60ES , FMI07N50E , FMI10N60E , FMI11N60E , FMI12N50E .