All MOSFET. FMH47N60S1 Datasheet

 

FMH47N60S1 Datasheet and Replacement


   Type Designator: FMH47N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 125 nC
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 8400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-3P
 
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FMH47N60S1 Datasheet (PDF)

 ..1. Size:509K  fuji
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FMH47N60S1

http://www.fujielectric.com/products/semiconductor/FMH47N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 3.2 0.1TO-3P15.5max13 0.2 1.50.2Low switching loss10 0.2 4.50.2easy to use (more controllabe switching dV/dt by R )gDrain(D)Applications

 0.1. Size:258K  inchange semiconductor
 fmh47n60s1fd.pdf pdf_icon

FMH47N60S1

isc N-Channel MOSFET Transistor FMH47N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

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