FMI07N50E Specs and Replacement

Type Designator: FMI07N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: T-PACK-L

FMI07N50E substitution

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FMI07N50E datasheet

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FMI07N50E

FMI07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: FMH28N50E, FMH28N50ES, FMH30N60S1, FMH47N60S1, FMI03N60E, FMI05N50E, FMI05N60E, FMI06N60ES, IRFB4227, FMI10N60E, FMI11N60E, FMI12N50E, FMI12N50ES, FMI12N60ES, FMI13N60E, FMI13N60ES, FMI16N50E

Keywords - FMI07N50E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs