All MOSFET. FMI07N50E Datasheet

 

FMI07N50E Datasheet and Replacement


   Type Designator: FMI07N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: T-PACK-L
 

 FMI07N50E substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMI07N50E Datasheet (PDF)

 ..1. Size:404K  fuji
 fmi07n50e.pdf pdf_icon

FMI07N50E

FMI07N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: FMH28N50E , FMH28N50ES , FMH30N60S1 , FMH47N60S1 , FMI03N60E , FMI05N50E , FMI05N60E , FMI06N60ES , IRFB4227 , FMI10N60E , FMI11N60E , FMI12N50E , FMI12N50ES , FMI12N60ES , FMI13N60E , FMI13N60ES , FMI16N50E .

Keywords - FMI07N50E MOSFET datasheet

 FMI07N50E cross reference
 FMI07N50E equivalent finder
 FMI07N50E lookup
 FMI07N50E substitution
 FMI07N50E replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.