FMI12N50ES Datasheet and Replacement
Type Designator: FMI12N50ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: T-PACK-L
FMI12N50ES substitution
FMI12N50ES Datasheet (PDF)
fmi12n50es.pdf

FMI12N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.
fmi12n50e.pdf

FMI12N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmi12n60es.pdf

FMI12N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5
Datasheet: FMI03N60E , FMI05N50E , FMI05N60E , FMI06N60ES , FMI07N50E , FMI10N60E , FMI11N60E , FMI12N50E , IRFP250N , FMI12N60ES , FMI13N60E , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E .
History: APQ10SN60A
Keywords - FMI12N50ES MOSFET datasheet
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History: APQ10SN60A



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