FMI13N60E Datasheet and Replacement
Type Designator: FMI13N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: T-PACK-L
FMI13N60E substitution
FMI13N60E Datasheet (PDF)
fmi13n60e.pdf

FMI13N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmi13n60es.pdf

FMI13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (
Datasheet: FMI05N60E , FMI06N60ES , FMI07N50E , FMI10N60E , FMI11N60E , FMI12N50E , FMI12N50ES , FMI12N60ES , 2SK3878 , FMI13N60ES , FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 .
History: RJK2057DPA | 2N5198
Keywords - FMI13N60E MOSFET datasheet
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History: RJK2057DPA | 2N5198



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