FML12N60ES Datasheet and Replacement
Type Designator: FML12N60ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TFP
FML12N60ES substitution
FML12N60ES Datasheet (PDF)
fml12n60es.pdf
http://www.fujisemi.comFML12N60ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow
fml12n50es.pdf
http://www.fujisemi.comFML12N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow
Datasheet: FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , IRF9540N , FML13N60ES , FML16N50ES , FML16N60ES , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F , FS100VSJ-03F , FS10AS-06 .
Keywords - FML12N60ES MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: CEM6056 | SQS484EN
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