All MOSFET. FML12N60ES Datasheet

 

FML12N60ES Datasheet and Replacement


   Type Designator: FML12N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TFP
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FML12N60ES Datasheet (PDF)

 ..1. Size:309K  fuji
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FML12N60ES

http://www.fujisemi.comFML12N60ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

 8.1. Size:278K  fuji
 fml12n50es.pdf pdf_icon

FML12N60ES

http://www.fujisemi.comFML12N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

Datasheet: FMI16N50E , FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , IRF4905 , FML13N60ES , FML16N50ES , FML16N60ES , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F , FS100VSJ-03F , FS10AS-06 .

History: SVS7N70FD2 | HCD65R830 | FQU6P25TU | NTP30N06 | IPW60R060C7 | SI7390DP | APT4020BVR

Keywords - FML12N60ES MOSFET datasheet

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