FML13N60ES Specs and Replacement

Type Designator: FML13N60ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TFP

FML13N60ES substitution

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FML13N60ES datasheet

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FML13N60ES

http //www.fujisemi.com FML13N60ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0 0.2 7.0 0.2 0.4 0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow... See More ⇒

Detailed specifications: FMI16N50ES, FMI16N60E, FMI16N60ES, FMI20N50E, FMI20N50ES, FMI80N10T2, FML12N50ES, FML12N60ES, IRF4905, FML16N50ES, FML16N60ES, FML20N50ES, FS100KMJ-03F, FS100UMJ-03F, FS100VSJ-03F, FS10AS-06, FS10AS-2

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