All MOSFET. FML13N60ES Datasheet

 

FML13N60ES Datasheet and Replacement


   Type Designator: FML13N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TFP
 

 FML13N60ES substitution

   - MOSFET ⓘ Cross-Reference Search

 

FML13N60ES Datasheet (PDF)

 ..1. Size:310K  fuji
 fml13n60es.pdf pdf_icon

FML13N60ES

http://www.fujisemi.comFML13N60ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

Datasheet: FMI16N50ES , FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , FML12N60ES , IRF4905 , FML16N50ES , FML16N60ES , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F , FS100VSJ-03F , FS10AS-06 , FS10AS-2 .

History: SWU12N70D | 2N7002DW1T1 | BRFL65R380C | BRFL65R160C | SI2372DS | IRF7807V | WMJ3N120D1

Keywords - FML13N60ES MOSFET datasheet

 FML13N60ES cross reference
 FML13N60ES equivalent finder
 FML13N60ES lookup
 FML13N60ES substitution
 FML13N60ES replacement

 

 
Back to Top

 


 
.