All MOSFET. FML16N50ES Datasheet

 

FML16N50ES Datasheet and Replacement


   Type Designator: FML16N50ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TFP
 

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FML16N50ES Datasheet (PDF)

 ..1. Size:286K  fuji
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FML16N50ES

http://www.fujisemi.comFML16N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

 8.1. Size:311K  fuji
 fml16n60es.pdf pdf_icon

FML16N50ES

http://www.fujisemi.comFML16N60ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

Datasheet: FMI16N60E , FMI16N60ES , FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , FML12N60ES , FML13N60ES , IRLB4132 , FML16N60ES , FML20N50ES , FS100KMJ-03F , FS100UMJ-03F , FS100VSJ-03F , FS10AS-06 , FS10AS-2 , FS10AS-3 .

History: PMN230ENEA | PHP20NQ20T | MPSU70M1K1B | PMN20ENA | IPI90N06S4L-04 | HGS063N08SL | MPSW60M043CFD

Keywords - FML16N50ES MOSFET datasheet

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