FML20N50ES Specs and Replacement

Type Designator: FML20N50ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 95 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: TFP

FML20N50ES substitution

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FML20N50ES datasheet

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FML20N50ES

http //www.fujisemi.com FML20N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0 0.2 7.0 0.2 0.4 0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow... See More ⇒

Detailed specifications: FMI20N50E, FMI20N50ES, FMI80N10T2, FML12N50ES, FML12N60ES, FML13N60ES, FML16N50ES, FML16N60ES, K3569, FS100KMJ-03F, FS100UMJ-03F, FS100VSJ-03F, FS10AS-06, FS10AS-2, FS10AS-3, FS10ASJ-06F, FS10ASJ-2

Keywords - FML20N50ES MOSFET specs

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