All MOSFET. FML20N50ES Datasheet

 

FML20N50ES Datasheet and Replacement


   Type Designator: FML20N50ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.7 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: TFP
 

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FML20N50ES Datasheet (PDF)

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FML20N50ES

http://www.fujisemi.comFML20N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

Datasheet: FMI20N50E , FMI20N50ES , FMI80N10T2 , FML12N50ES , FML12N60ES , FML13N60ES , FML16N50ES , FML16N60ES , SPP20N60C3 , FS100KMJ-03F , FS100UMJ-03F , FS100VSJ-03F , FS10AS-06 , FS10AS-2 , FS10AS-3 , FS10ASJ-06F , FS10ASJ-2 .

Keywords - FML20N50ES MOSFET datasheet

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