FS10VS-9A Datasheet and Replacement
Type Designator: FS10VS-9A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: LDPAK
FS10VS-9A substitution
FS10VS-9A Datasheet (PDF)
fs10vs-9a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: FS10AS-3 , FS10ASJ-06F , FS10ASJ-2 , FS10ASJ-3 , FS10SM-10 , FS10SM-12 , FS10SM-16A , FS10SM-18A , IRLB4132 , FS14SM-10 , FS14SM-12 , FS14SM-14A , FS14SM-16A , FS14SM-9 , FS16SM-10 , FS16SM-9 , FS18SM-10 .
History: DH020N03 | SMK0460IS | 2SK1500 | ME120N10T-G | BRI630 | NTMS4873NFR2G | IRF6668PBF
Keywords - FS10VS-9A MOSFET datasheet
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History: DH020N03 | SMK0460IS | 2SK1500 | ME120N10T-G | BRI630 | NTMS4873NFR2G | IRF6668PBF
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