All MOSFET. FSS804 Datasheet

 

FSS804 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FSS804
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP-8

 FSS804 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSS804 Datasheet (PDF)

 0.1. Size:34K  sanyo
 fss804-tl-e.pdf

FSS804 FSS804

Ordering number : ENA0518 FSS804SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFSS804ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 14 ADra

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