FSS804 Specs and Replacement

Type Designator: FSS804

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP-8

FSS804 substitution

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FSS804 datasheet

 0.1. Size:34K  sanyo
 fss804-tl-e.pdf pdf_icon

FSS804

Ordering number ENA0518 FSS804 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FSS804 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 14 A Dra... See More ⇒

Detailed specifications: FS70VS-2, FS70VSJ-06F, FS70VSJ-2, FS7KM-12A, FS7VS-12A, FSS264, FSS273, FSS275, IRF640N, FTCO3V455A1, FTD2011, FTD2019, FTK3341L, FTK3857L, FTK3857T, FTK50N06, FTK630

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