All MOSFET. FTD2011 Datasheet

 

FTD2011 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTD2011
   Marking Code: 2011
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSSOP-8

 FTD2011 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTD2011 Datasheet (PDF)

 ..1. Size:69K  sanyo
 ftd2011.pdf

FTD2011 FTD2011

Ordering number:ENN6072AN-Channel Silicon MOSFETFTD2011Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2011] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2

 ..2. Size:74K  kexin
 ftd2011.pdf

FTD2011 FTD2011

SMD Type MOSFETDual N-Channel Enhancement Mode MOSFETFTD2011TSSOP-8Unit: mm Features RDS(ON)=30m Max. @VGS=4V RDS(ON)=45m Max. @VGS=2.5V1 : Drain12 : Source13 : Source14 : Gate15 : Gate26 : Source2D1D27 : Source2S1S2 8 : Drain2S1 S2G1G2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VG

 8.1. Size:41K  sanyo
 ftd2014.pdf

FTD2011 FTD2011

Ordering number:ENN6267N-Channel Silicon MOSFETFTD2014Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2014] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 43 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2

 8.2. Size:42K  sanyo
 ftd2019.pdf

FTD2011 FTD2011

Ordering number:ENN6383N-Channel Silicon MOSFETFTD2019Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2019] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28

 8.3. Size:42K  sanyo
 ftd2017.pdf

FTD2011 FTD2011

Ordering number:ENN6361N-Channel Silicon MOSFETFTD2017Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2017] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28

 8.4. Size:76K  sanyo
 ftd2013.pdf

FTD2011 FTD2011

Ordering number:ENN6080AN-Channel Silicon MOSFETFTD2013Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2013] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2

 8.5. Size:41K  sanyo
 ftd2015.pdf

FTD2011 FTD2011

Ordering number:ENN6393N-Channel Silicon MOSFETFTD2015Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2155A Mounting height 1.1mm.[FTD2015] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28 :

 8.6. Size:76K  kexin
 ftd2019.pdf

FTD2011 FTD2011

SMD Type TransistorsDual N-Channel Enhancement Mode MOSFETFTD2019TSSOP-8 FeaturesUnit: mm RDS(ON)=28m Max. @VGS=4V RDS(ON)=35m Max. @VGS=2.5V1 : Drain12 : Source13 : Source14 : Gate1D1 D25 : Gate2S2S16 : Source2S2S17 : Source2G2D1 8 : Drain2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30

 8.7. Size:985K  cn vbsemi
 ftd2017a.pdf

FTD2011 FTD2011

FTD2017Awww.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATI

 8.8. Size:2022K  cn vbsemi
 ftd2017.pdf

FTD2011 FTD2011

FTD2017www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STU610S

 

 
Back to Top