FW389 Specs and Replacement
Type Designator: FW389
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 34 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: SOIC-8
FW389 substitution
- MOSFET ⓘ Cross-Reference Search
FW389 datasheet
fw389.pdf
Ordering number ENA2066A FW389 Power MOSFET http //onsemi.com 100V, 2A, 225m , 100V, 2A, 300m , Complementary Dual SOIC8 Features ON-resistance Nch RDS(on)1=165m (typ.) Input Capacitance Nch Ciss=490pF(typ.) Pch RDS(on)1=230m (typ.) Pch Ciss=1000pF(typ.) 4V drive Halogen free compliance Protection diode in Specifications ... See More ⇒
Detailed specifications: FTK3857T, FTK50N06, FTK630, FTK830, FTK840, FW217A, FW297, FW344A, IRF9540, FW4604, FX20ASJ-03F, FX20ASJ-06, FX20ASJ-2, FX20KMJ-03, FX20KMJ-06, FX20KMJ-2, FX20KMJ-3
Keywords - FW389 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOL1206 | IRLS3813PBF
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