FW389 PDF and Equivalents Search

 

FW389 Specs and Replacement

Type Designator: FW389

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: SOIC-8

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FW389 datasheet

 ..1. Size:939K  onsemi
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FW389

Ordering number ENA2066A FW389 Power MOSFET http //onsemi.com 100V, 2A, 225m , 100V, 2A, 300m , Complementary Dual SOIC8 Features ON-resistance Nch RDS(on)1=165m (typ.) Input Capacitance Nch Ciss=490pF(typ.) Pch RDS(on)1=230m (typ.) Pch Ciss=1000pF(typ.) 4V drive Halogen free compliance Protection diode in Specifications ... See More ⇒

Detailed specifications: FTK3857T, FTK50N06, FTK630, FTK830, FTK840, FW217A, FW297, FW344A, IRF9540, FW4604, FX20ASJ-03F, FX20ASJ-06, FX20ASJ-2, FX20KMJ-03, FX20KMJ-06, FX20KMJ-2, FX20KMJ-3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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