All MOSFET. FW389 Datasheet

 

FW389 Datasheet and Replacement


   Type Designator: FW389
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: SOIC-8
 

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FW389 Datasheet (PDF)

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FW389

Ordering number : ENA2066AFW389Power MOSFEThttp://onsemi.com 100V, 2A, 225m , 100V, 2A, 300m , Complementary Dual SOIC8Features ON-resistance Nch : RDS(on)1=165m (typ.) Input Capacitance Nch : Ciss=490pF(typ.) Pch : RDS(on)1=230m (typ.) Pch : Ciss=1000pF(typ.) 4V drive Halogen free compliance Protection diode inSpecifications

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