IRLIZ44A Specs and Replacement
Type Designator: IRLIZ44A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ -
Output Capacitance: 555 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO262
- MOSFET ⓘ Cross-Reference Search
IRLIZ44A datasheet
7.2. Size:105K international rectifier
irliz44n.pdf 
PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel... See More ⇒
7.4. Size:1182K international rectifier
irliz44gpbf.pdf
PD- 95754 IRLIZ44GPbF Lead-Free www.irf.com 1 8/23/04 IRLIZ44GPbF 2 www.irf.com IRLIZ44GPbF www.irf.com 3 IRLIZ44GPbF 4 www.irf.com IRLIZ44GPbF www.irf.com 5 IRLIZ44GPbF 6 www.irf.com IRLIZ44GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + ... See More ⇒
7.5. Size:256K international rectifier
irliz44npbf.pdf
PD - 95456 IRLIZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.022 l Fully Avalanche Rated G l Lead-Free ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu... See More ⇒
7.6. Size:499K infineon
irliz44npbf.pdf
IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒
7.7. Size:200K inchange semiconductor
irliz44n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRLIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
7.8. Size:275K inchange semiconductor
irliz44g.pdf
iscN-Channel MOSFET Transistor IRLIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: IRLIZ14A, IRLIZ14G, IRLIZ24A, IRLIZ24G, IRLIZ24N, IRLIZ34A, IRLIZ34G, IRLIZ34N, P55NF06, IRLIZ44G, IRLIZ44N, IRLL014, IRLL014N, IRLL024N, IRLL110, IRLL2703, IRLL2705
Keywords - IRLIZ44A MOSFET specs
IRLIZ44A cross reference
IRLIZ44A equivalent finder
IRLIZ44A pdf lookup
IRLIZ44A substitution
IRLIZ44A replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
