IRLIZ44A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLIZ44A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 42 nC
Время нарастания (tr): 24 ns
Выходная емкость (Cd): 555 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm
Тип корпуса: TO262
IRLIZ44A Datasheet (PDF)
irliz44n.pdf
PD - 9.1498AIRLIZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremel
irliz44gpbf.pdf
PD- 95754IRLIZ44GPbF Lead-Freewww.irf.com 18/23/04IRLIZ44GPbF2 www.irf.comIRLIZ44GPbFwww.irf.com 3IRLIZ44GPbF4 www.irf.comIRLIZ44GPbFwww.irf.com 5IRLIZ44GPbF6 www.irf.comIRLIZ44GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+
irliz44npbf.pdf
PD - 95456IRLIZ44NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.022l Fully Avalanche RatedGl Lead-FreeID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
irliz44npbf.pdf
IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
irliz44n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRLIZ44NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
irliz44g.pdf
iscN-Channel MOSFET Transistor IRLIZ44GFEATURESLow drain-source on-resistance:RDS(ON) 28m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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