Справочник MOSFET. IRLIZ44A

 

IRLIZ44A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLIZ44A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 42 nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 555 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRLIZ44A

 

 

IRLIZ44A Datasheet (PDF)

 ..1. Size:193K  1
 irliz44a irlw44a.pdf

IRLIZ44A IRLIZ44A

 7.1. Size:170K  1
 irliz44g.pdf

IRLIZ44A IRLIZ44A

 7.2. Size:105K  international rectifier
 irliz44n.pdf

IRLIZ44A IRLIZ44A

PD - 9.1498AIRLIZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremel

 7.3. Size:170K  international rectifier
 irliz44g.pdf

IRLIZ44A IRLIZ44A

 7.4. Size:1182K  international rectifier
 irliz44gpbf.pdf

IRLIZ44A IRLIZ44A

PD- 95754IRLIZ44GPbF Lead-Freewww.irf.com 18/23/04IRLIZ44GPbF2 www.irf.comIRLIZ44GPbFwww.irf.com 3IRLIZ44GPbF4 www.irf.comIRLIZ44GPbFwww.irf.com 5IRLIZ44GPbF6 www.irf.comIRLIZ44GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

 7.5. Size:256K  international rectifier
 irliz44npbf.pdf

IRLIZ44A IRLIZ44A

PD - 95456IRLIZ44NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.022l Fully Avalanche RatedGl Lead-FreeID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu

 7.6. Size:499K  infineon
 irliz44npbf.pdf

IRLIZ44A IRLIZ44A

IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 7.7. Size:200K  inchange semiconductor
 irliz44n.pdf

IRLIZ44A IRLIZ44A

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRLIZ44NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 7.8. Size:275K  inchange semiconductor
 irliz44g.pdf

IRLIZ44A IRLIZ44A

iscN-Channel MOSFET Transistor IRLIZ44GFEATURESLow drain-source on-resistance:RDS(ON) 28m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top