All MOSFET. IRLIZ44N Datasheet

 

IRLIZ44N Datasheet and Replacement


   Type Designator: IRLIZ44N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220F
 

 IRLIZ44N substitution

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IRLIZ44N Datasheet (PDF)

 ..1. Size:105K  international rectifier
irliz44n.pdf pdf_icon

IRLIZ44N

PD - 9.1498AIRLIZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremel

 ..2. Size:256K  international rectifier
irliz44npbf.pdf pdf_icon

IRLIZ44N

PD - 95456IRLIZ44NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.022l Fully Avalanche RatedGl Lead-FreeID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu

 ..3. Size:499K  infineon
irliz44npbf.pdf pdf_icon

IRLIZ44N

IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 ..4. Size:200K  inchange semiconductor
irliz44n.pdf pdf_icon

IRLIZ44N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRLIZ44NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Datasheet: IRLIZ24A , IRLIZ24G , IRLIZ24N , IRLIZ34A , IRLIZ34G , IRLIZ34N , IRLIZ44A , IRLIZ44G , STP75NF75 , IRLL014 , IRLL014N , IRLL024N , IRLL110 , IRLL2703 , IRLL2705 , IRLL3303 , IRLM014A .

History: HGD110N08A | 2SK3708

Keywords - IRLIZ44N MOSFET datasheet

 IRLIZ44N cross reference
 IRLIZ44N equivalent finder
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