FX70KMJ-03 Datasheet and Replacement
Type Designator: FX70KMJ-03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 228 nS
Cossⓘ - Output Capacitance: 2300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
Package: TO-220FN
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FX70KMJ-03 Datasheet (PDF)
fx70kmj-03.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3700 | IPB22N03S4L-15
Keywords - FX70KMJ-03 MOSFET datasheet
FX70KMJ-03 cross reference
FX70KMJ-03 equivalent finder
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FX70KMJ-03 replacement
History: 2SK3700 | IPB22N03S4L-15



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