FY4ADJ-03A PDF and Equivalents Search

 

FY4ADJ-03A Specs and Replacement

Type Designator: FY4ADJ-03A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOP-8

FY4ADJ-03A substitution

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FY4ADJ-03A datasheet

 ..1. Size:213K  renesas
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FY4ADJ-03A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FX6KMJ-06 , FX6KMJ-2 , FX6KMJ-3 , FX70KMJ-03 , FX70SMJ-03 , FY10AAJ-03F , FY12AAJ-03F , FY14AAJ-03F , 10N65 , FY4AEJ-03 , FY5ACJ-03F , FY6ACJ-03A , FY7BCH-02F , FY8AAJ-03F , FY8ABJ-03 , IRF8252PBF , IRF8252PBF-1 .

History: FCP4N60

Keywords - FY4ADJ-03A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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