FY8ABJ-03 PDF and Equivalents Search

 

FY8ABJ-03 Specs and Replacement

Type Designator: FY8ABJ-03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP-8

FY8ABJ-03 substitution

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FY8ABJ-03 datasheet

 ..1. Size:196K  renesas
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FY8ABJ-03

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FY12AAJ-03F , FY14AAJ-03F , FY4ADJ-03A , FY4AEJ-03 , FY5ACJ-03F , FY6ACJ-03A , FY7BCH-02F , FY8AAJ-03F , 20N50 , IRF8252PBF , IRF8252PBF-1 , IRF8313PBF , IRF8327SPBF , IRF840ALPBF , IRF840APBF , IRF840ASPBF , IRF840B .

History: IRF8707PBF-1

Keywords - FY8ABJ-03 MOSFET specs

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