IRF840SPBF Datasheet and Replacement
Type Designator: IRF840SPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-263
IRF840SPBF substitution
IRF840SPBF Datasheet (PDF)
irf840spbf.pdf
PD-95136IRF840SPbF Lead-FreeD2Pak05/10/04Document Number: 91071 www.vishay.com1IRF840SPbFDocument Number: 91071 www.vishay.com2IRF840SPbFDocument Number: 91071 www.vishay.com3IRF840SPbFDocument Number: 91071 www.vishay.com4IRF840SPbFDocument Number: 91071 www.vishay.com5IRF840SPbFDocument Number: 91071 www.vishay.com6IRF840SPbFDocument Numb
irf840spbf sihf840s.pdf
IRF840S, SiHF840SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Surface MountRDS(on) ()VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.3 Repetitive Avalanche RatedQgd (nC) 32 Fast Switching Ease of ParallelingConfiguration Sin
irf840s sihf840s.pdf
IRF840S, SiHF840SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 500 Available in Tape and Reel AvailableRDS(on) ()VGS = 10 V 0.85 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 63COMPLIANT Repetitive Avalanche RatedQgs (nC) 9.3 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Simple Drive Requireme
Datasheet: IRF840ASPBF , IRF840B , IRF840LC , IRF840LCLPBF , IRF840LCPBF , IRF840LCSPBF , IRF840LPBF , IRF840PBF , RU7088R , IRF8513PBF , IRF8707GPBF , IRF8707PBF , IRF8707PBF-1 , IRF8714GPBF , IRF8714PBF , IRF8714PBF-1 , IRF8721GPBF .
Keywords - IRF840SPBF MOSFET datasheet
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