Справочник MOSFET. IRF840SPBF

 

IRF840SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF840SPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 125 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 63 nC
   Время нарастания (tr): 23 ns
   Выходная емкость (Cd): 310 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IRF840SPBF

 

 

IRF840SPBF Datasheet (PDF)

 ..1. Size:666K  international rectifier
irf840spbf.pdf

IRF840SPBF
IRF840SPBF

PD-95136IRF840SPbF Lead-FreeD2Pak05/10/04Document Number: 91071 www.vishay.com1IRF840SPbFDocument Number: 91071 www.vishay.com2IRF840SPbFDocument Number: 91071 www.vishay.com3IRF840SPbFDocument Number: 91071 www.vishay.com4IRF840SPbFDocument Number: 91071 www.vishay.com5IRF840SPbFDocument Number: 91071 www.vishay.com6IRF840SPbFDocument Numb

 ..2. Size:194K  vishay
irf840spbf sihf840s.pdf

IRF840SPBF
IRF840SPBF

IRF840S, SiHF840SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Surface MountRDS(on) ()VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.3 Repetitive Avalanche RatedQgd (nC) 32 Fast Switching Ease of ParallelingConfiguration Sin

 7.1. Size:172K  international rectifier
irf840s.pdf

IRF840SPBF
IRF840SPBF

 7.2. Size:1039K  vishay
irf840s sihf840s.pdf

IRF840SPBF
IRF840SPBF

IRF840S, SiHF840SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 500 Available in Tape and Reel AvailableRDS(on) ()VGS = 10 V 0.85 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 63COMPLIANT Repetitive Avalanche RatedQgs (nC) 9.3 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Simple Drive Requireme

 7.3. Size:94K  ape
irf840s.pdf

IRF840SPBF
IRF840SPBF

IRF840SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionAPEC MOSFET provide the power designer with the best combination of fastGswitching , lower on-resistance and reasonable cost.DS TO-263(S)

 7.4. Size:1503K  kexin
irf840s.pdf

IRF840SPBF
IRF840SPBF

SMD Type MOSFETN-Channel MOSFETIRF840S (KRF840S) Features VDS (V) =500V ID =8 A (VGS = 10V) RDS(ON) 0.85 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 20 Ta = 25 8 Continuous Drain Current ID Ta = 1

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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