IRF9130SMD05 Datasheet. Specs and Replacement

Type Designator: IRF9130SMD05  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SMD05

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IRF9130SMD05 substitution

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IRF9130SMD05 datasheet

 ..1. Size:18K  semelab
irf9130smd05 irfnj9130.pdf pdf_icon

IRF9130SMD05

IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. APPLICATIONS 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 VDSS -100V ID(cont) -11A 2 RDS(on) 0.30 0.127 (0.005) FEATURES 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) HERMETICALLY SEALED max. 7.26 (... See More ⇒

 4.1. Size:20K  semelab
irf9130smd.pdf pdf_icon

IRF9130SMD05

IRF9130SMD MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET FOR HI REL APPLICATIONS VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUI... See More ⇒

 7.1. Size:149K  international rectifier
2n6804 irf9130.pdf pdf_icon

IRF9130SMD05

PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique pr... See More ⇒

Detailed specifications: IRF8736PBF, IRF8736PBF-1, IRF8788PBF, IRF8788PBF-1, IRF8852PBF, IRF8910GPBF, IRF8910PBF-1, IRF9130SMD, 20N60, IRF9310PBF, IRF9310PBF-1, IRF9317PBF, IRF9321PBF, IRF9328PBF, IRF9332PBF, IRF9333PBF, IRF9335PBF

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