IRLL3303 Datasheet and Replacement
Type Designator: IRLL3303
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT223
IRLL3303 Datasheet (PDF)
irll3303pbf.pdf

PD- 95223IRLL3303PbF Surface MountHEXFET Power MOSFET Dynamic dv/dt RatingD Logic-Level Gate DriveVDSS = 30V Fast Switching Ease of ParallelingRDS(on) = 0.031 Advanced Process TechnologyG Ultra Low On-Resistance Lead-Free ID = 4.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely
irll3303.pdf

PD- 91379CIRLL3303HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 30V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.031 Ease of ParallelingG Advanced Process TechnologyID = 4.6A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resis
Datasheet: IRLIZ44G , IRLIZ44N , IRLL014 , IRLL014N , IRLL024N , IRLL110 , IRLL2703 , IRLL2705 , K4145 , IRLM014A , IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 .
Keywords - IRLL3303 MOSFET datasheet
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