IRLL3303 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLL3303
Marking Code: LL3303
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT223
IRLL3303 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLL3303 Datasheet (PDF)
irll3303pbf.pdf
PD- 95223IRLL3303PbF Surface MountHEXFET Power MOSFET Dynamic dv/dt RatingD Logic-Level Gate DriveVDSS = 30V Fast Switching Ease of ParallelingRDS(on) = 0.031 Advanced Process TechnologyG Ultra Low On-Resistance Lead-Free ID = 4.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely
irll3303.pdf
PD- 91379CIRLL3303HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 30V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.031 Ease of ParallelingG Advanced Process TechnologyID = 4.6A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resis
irll3303pbf.pdf
PD- 95223IRLL3303PbF Surface MountHEXFET Power MOSFET Dynamic dv/dt RatingD Logic-Level Gate DriveVDSS = 30V Fast Switching Ease of ParallelingRDS(on) = 0.031 Advanced Process TechnologyG Ultra Low On-Resistance Lead-Free ID = 4.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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