IRLL3303 Datasheet. Specs and Replacement
Type Designator: IRLL3303 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT223
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IRLL3303 datasheet
irll3303pbf.pdf
PD- 95223 IRLL3303PbF Surface Mount HEXFET Power MOSFET Dynamic dv/dt Rating D Logic-Level Gate Drive VDSS = 30V Fast Switching Ease of Paralleling RDS(on) = 0.031 Advanced Process Technology G Ultra Low On-Resistance Lead-Free ID = 4.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely... See More ⇒
irll3303.pdf
PD- 91379C IRLL3303 HEXFET Power MOSFET Surface Mount D Dynamic dv/dt Rating VDSS = 30V Logic-Level Gate Drive Fast Switching RDS(on) = 0.031 Ease of Paralleling G Advanced Process Technology ID = 4.6A Ultra Low On-Resistance S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis... See More ⇒
Detailed specifications: IRLIZ44G, IRLIZ44N, IRLL014, IRLL014N, IRLL024N, IRLL110, IRLL2703, IRLL2705, 2N7002, IRLM014A, IRLM110A, IRLM120A, IRLM210A, IRLM220A, IRLML2402, IRLML2502, IRLML2803
Keywords - IRLL3303 MOSFET specs
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